FM24CL04B-GTR 4 - Kbit Non Volatile Memory , FRAM Serial Flash Memory Fast I2C Interface

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FM24CL04B-GTR 4 - Kbit Non Volatile Memory , FRAM Serial Flash Memory Fast I2C Interface

Name: FM24CL04BGTR 4 Kbit Non Volatile Memory FRAM Serial Flash Memory Fast I2C Interface
Brand: CYPRESS
Price: 1 USD

China FM24CL04B-GTR 4 - Kbit Non Volatile Memory , FRAM Serial Flash Memory Fast I2C Interface wholesale

Brand Name : CYPRESS

Model Number : FM24CL04B

Certification : ROHS

Place of Origin : Original Factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union，Paypal

Supply Ability : 100000pcs

Delivery Time : 1-3Days

Packaging Details : BOX

Series : FM24CL04B

Voltage : 2.7 V to 3.65 V

Feature : Low power consumption

Memory capacity : 4 Kb (512 x 8)

Application : LCD Monitors, Flat Panel TV, Printers, GPS, MP3

Package : SOIC8

Clock frequency : 1-MHz frequency

Interface : Fast 2-wire Serial interface (I2C)

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FM24CL04B-GTR Flash Memory Chip 4Kbit Fast 2-wire Serial interface Serial FRAM Flash

FM24CL04B-GTR 4 - Kbit Non Volatile Memory , FRAM Serial Flash Memory Fast I2C Interface

Description

The FM24CL04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24CL04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24CL04B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24CL04B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24CL04B provides substantial benefits to users of serial (I2C) EEPROM as a hardware drop-in replacement. The device specifications are guaranteed over an industrial temperature range of –40 C to +85 C.

Features
■ 4-Kbit ferroelectric random access memory (F-RAM) logically
organized as 512 × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (See Data Retention and Endurance
on page 10)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Fast 2-wire Serial interface (I2C)
❐ Up to 1-MHz frequency
❐ Direct hardware replacement for serial (I2C) EEPROM
❐ Supports legacy timings for 100 kHz and 400 kHz
■ Low power consumption
❐ 100 A active current at 100 kHz
❐ 3 A (typ) standby current
■ Voltage operation: VDD = 2.7 V to 3.65 V
■ Industrial temperature: –40 C to +85 C
■ 8-pin small outline integrated circuit (SOIC) package
■ Restriction of hazardous substances (RoHS) compliant

Applications

Industrial, Communications & Networking

Product Tags:

serial flash memory

serial flash chip

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